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| SFH608 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection, 5300 VRMS Features * * * * * * * * * * Very High CTR at IF = 1.0 mA, VCE = 0.5 V Specified Minimum CTR at IF = 0.5 mA, VCE = 1.5 V 32 % (typ. 120 %) Good CTR Linearity with Forward Current Low CTR Degradation High Collector-Emitter Voltage VCEO = 55 V Isolation Test Voltage: 5300 VRMS Low Current Input Low Coupling Capacitance High Common Mode Transient Immunity A C NC 1 2 3 6B 5C 4E i179004 e3 Pb Pb-free * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Description The SFH 608 is an optocoupler designed for high current transfer ratio at low input currents with the output transistor saturated. This makes the device ideal for low current switching applications. The SFH608 is packaged in a six pin plastic DIP. Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * CSA 93751 * BSI IEC60950 IEC60065 Order Information Part SFH608-2 SFH608-3 SFH608-4 SFH608-5 SFH608-2-X006 SFH608-2-X007 SFH608-2-X009 SFH608-3-X006 SFH608-3-X007 SFH608-4-X006 SFH608-4-X007 SFH608-5-X007 Remarks CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 CTR 250 - 500 %, DIP-6 CTR 63 - 125 %, DIP-6 400 mil (option 6) CTR 63 - 125 %, SMD-6 (option 7) CTR 63 - 125 %, SMD-6 (option 9) CTR 100 - 200 %, DIP-6 400 mil (option 6) CTR 100 - 200 %, SMD-6 (option 7) CTR 160 - 320 %, DIP-6 400 mil (option 6) CTR 160 - 320 %, SMD-6 (option 7) CTR 250 - 500 %, SMD-6 (option 7) Applications Telecommunications Industrial Controls Office Machines Microprocessor System Interfaces For additional information on the available options refer to Option Information. Document Number 83664 Rev. 1.4, 26-Oct-04 www.vishay.com 1 SFH608 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage DC Forward current Surge forward current Total power dissipation t 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 50 2.5 70 Unit V mA A mW Output Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Surge collector current Total power dissipation tp 1.0 ms Pdiss Test condition Symbol VCE VCBO VEBO IC Value 55 55 7.0 50 100 150 Unit V V V mA mA mW Coupler Parameter Isolation test voltage (between emitter and detector, refer to climate DIN 40046 part 2 Nov. 74) Creepage Clearance Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Operating temperature range Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tsld t = 1.0 s Test condition Symbol VISO Value 5300 Unit VRMS 7.0 7.0 175 1012 10 11 mm mm C C C - 55 to + 150 - 55 to + 100 260 www.vishay.com 2 Document Number 83664 Rev. 1.4, 26-Oct-04 SFH608 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse voltage Reverse current Capacitance Thermal resistance Test condition IF = 5.0 mA IR = 10 A VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF VR IR CO Rthja 6.0 0.01 25 1070 10 Min Typ. 1.1 Max 1.5 Unit V V A pF K/W Output Parameter Voltage, collector-emitter Voltage, emitter-base Collector-emitter capacitance Collector - base capacitance Emitter - base capacitance Thermal resistance Collector-emitter leakage current VCE = 10 V Test condition ICE = 10 A IEB = 10 A VCE = 5.0, f = 1.0 MHz VCE = 5.0, f = 1.0 MHz VCE = 5.0, f = 1.0 MHz Symbol VCEO VEBO CCE CCB CEB Rthja ICEO Min 55 7.0 10 16 10 500 10 200 Typ. Max Unit V V pF pF pF K/W nA Coupler Parameter Coupling capacitance Saturation voltage, collectoremitter IC = 0.32 mA, IF = 1.0 mA IC = 0.5 mA, IF = 1.0 mA IC = 0.8 mA, IF = 1.0 mA IC = 01.25 mA, IF = 1.0 mA SFH608-2 SFH608-3 SFH608-4 SFH608-5 Test condition Part Symbol CC VCEsat VCEsat VCEsat VCEsat Min Typ. 0.60 0.25 0.25 0.25 0.25 0.4 0.4 0.4 0.4 Max Unit pF V V V V Current Transfer Ratio Parameter Coupling Transfer Ratio Test condition IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V Part SFH608-2 SFH608-2 SFH608-3 SFH608-3 SFH608-4 SFH608-4 SFH608-5 SFH608-5 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 63 32 100 50 160 80 250 125 300 200 500 120 320 75 200 Typ. Max 125 Unit % % % % % % % % Document Number 83664 Rev. 1.4, 26-Oct-04 www.vishay.com 3 SFH608 Vishay Semiconductors Switching Characteristics Parameter Turn-on time Rise time Turn-off time Fall time Test condition IC = 2.0 mA (to adjust by IF), RL = 100 , VCC = 5.0 V IC = 2.0 mA (to adjust by IF), RL = 100 , VCC = 5.0 V IC = 2.0 mA (to adjust by IF), RL = 100 , VCC= 5.0 V IC = 2.0 mA (to adjust by IF), RL = 100 , VCC = 5.0 V Symbol ton tr toff tf Min Typ. 8.0 5.0 7.5 7.0 Max Unit s s s s Typical Characteristics (Tamb = 25 C unless otherwise specified) IF RL VCC IC 47 VCE = 0.5 V, CTR = f (TA, IF) isfh608_01 isfh608_03 Figure 1. Switching Schematic Figure 3. Current Transfer Ratio (typ.) IF = 1.0 mA, VCE = 5.0 V, tON, tR, tOFF, tF, = f (RL) VCE = 1.5 V, CTR = f (TA, IF) isfh608_02 isfh608_04 Figure 2. Switching Times Figure 4. Current Transfer Ratio (typ.) www.vishay.com 4 Document Number 83664 Rev. 1.4, 26-Oct-04 SFH608 Vishay Semiconductors VF = f (IF) ICE = f (VCE, IF) isfh608_05 isfh608_08 Figure 5. Diode Forward Voltage (typ.) Figure 8. Output Characteristics IF = 1.0 mA, VF = f (TA) IF = f (TA) isfh608_06 isfh608_09 Figure 6. Diode Forward Voltage (typ.) Figure 9. Permissible Forward Current Diode ICE = f (VCE, IB) Ptot = f (TA) isfh608_07 isfh608_10 Figure 7. Output Characteristics Figure 10. Permissible Power Dissipation for Transistor and Diode Document Number 83664 Rev. 1.4, 26-Oct-04 www.vishay.com 5 SFH608 Vishay Semiconductors f=1.0 MHz,CCE=f (VCE) CCB=f (VCB), CEB=f (VEB) IF = 0, VCE = 10 V, ICEO = f (TA) isfh608_11 isfh608_12 Figure 11. Transistor Capacitance Figure 12. Collector-Emitter Leakage Current vs.Temp. Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) www.vishay.com 6 Document Number 83664 Rev. 1.4, 26-Oct-04 SFH608 Vishay Semiconductors Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18450 Document Number 83664 Rev. 1.4, 26-Oct-04 www.vishay.com 7 SFH608 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83664 Rev. 1.4, 26-Oct-04 |
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